A Tight Binding Method Study of Optimized Si-SiO2 System

doi:10.1109/TED.2010.2071150

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Watanabe, Hiroshi	en_US
dc.contributor.author	Kawabata, Kenji	en_US
dc.contributor.author	Ichikawa, Takashi	en_US
dc.date.accessioned	2019-04-02T06:00:28Z	-
dc.date.available	2019-04-02T06:00:28Z	-
dc.date.issued	2010-11-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2010.2071150	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150110	-
dc.description.abstract	A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO2 in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO2 from the conduction band, which may suggest that the Si dot surrounded by SiO2 sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm.	en_US
dc.language.iso	en_US	en_US
dc.subject	Band gap	en_US
dc.subject	density-of-states ( DOS)	en_US
dc.subject	interfacial states	en_US
dc.subject	molecular dynamics	en_US
dc.subject	Si dot	en_US
dc.subject	SiO2	en_US
dc.subject	tight binding	en_US
dc.title	A Tight Binding Method Study of Optimized Si-SiO2 System	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2010.2071150	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	57	en_US
dc.citation.spage	3084	en_US
dc.citation.epage	3091	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	電子與資訊研究中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Microelectronics and Information Systems Research Center	en_US
dc.identifier.wosnumber	WOS:000283446600038	en_US
dc.citation.woscount	4	en_US
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