Ultrafast Initial Growth Rate of Self-Assembled TiO2 Nanorod Arrays Fabricated by Ti Anodization

doi:10.1149/1.3496404

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DC Field	Value	Language
dc.contributor.author	Chang, Yung-Huang	en_US
dc.contributor.author	Lin, Hsiao-Wei	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2019-04-02T06:00:26Z	-
dc.date.available	2019-04-02T06:00:26Z	-
dc.date.issued	2011-01-01	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.3496404	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150163	-
dc.description.abstract	The growth mechanism of TiO2 nanorods fabricated by the anodization of Ti films using a mask of anodic aluminum oxide is investigated by examining the growth rate and morphology of the fabricated nanorods. It is found that the growth rate is 250 nm/s within the first 0.1 s at 117 V and decreases abruptly to 0.79 nm/s after 3 s. In addition, the diameter of the nanorods is larger near the top than near the root of the nanorods. A growth mechanism is proposed to explain these interesting phenomena. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3496404] All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Ultrafast Initial Growth Rate of Self-Assembled TiO2 Nanorod Arrays Fabricated by Ti Anodization	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3496404	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	14	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000284317600031	en_US
dc.citation.woscount	8	en_US
Appears in Collections:	Articles