標題: Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
作者: Wang, Sheng-Yu
Lee, Dai-Ying
Huang, Tai-Yuen
Wu, Jia-Woei
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 10-十二月-2010
摘要: In this study, the resistive switching characteristics of a ZrO2-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO2 via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), good endurance (>10(3) cycles), a stubborn nondestructive readout property (>10(4) s), and long retention time (>10(7) s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over 10(3) cycles without any operational errors observed in this memory device. Due to the interface layer induced by the Ti top electrode, the formation and rupture of conducting filaments are suggested to occur near the Ti/ZrO2 interface. The oxygen vacancies induced by the embedded Mo can enhance the formation of conducting filaments and further improve the switching characteristics in ZrO2-based devices.
URI: http://dx.doi.org/10.1088/0957-4484/21/49/495201
http://hdl.handle.net/11536/150164
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/49/495201
期刊: NANOTECHNOLOGY
Volume: 21
顯示於類別:期刊論文