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dc.contributor.authorLue, C. S.en_US
dc.contributor.authorYang, S. H.en_US
dc.contributor.authorSu, T. H.en_US
dc.contributor.authorYoung, Ben-Lien_US
dc.date.accessioned2019-04-03T06:39:42Z-
dc.date.available2019-04-03T06:39:42Z-
dc.date.issued2010-11-22en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.82.195129en_US
dc.identifier.urihttp://hdl.handle.net/11536/150172-
dc.description.abstractWe report the results of a Al-27 nuclear magnetic resonance (NMR) study of CeOs2Al10 at temperatures between 4 and 300 K. This material has been of current interest due to indications of hybridization gap behavior below the transition temperature T-o similar or equal to 29 K. Five Al-27 NMR resonance lines that are associated with five nonequivalent crystallographic aluminum sites have been resolved. For each individual aluminum site, the low-temperature NMR Knight shift goes over a thermally activated response. The temperature-dependent spin-lattice-relaxation rate exhibits a rapid drop below T-o, indicative of the formation of an energy gap in this material. We interpret the Knight shift and the relaxation-rate data in light of the presence of a pseudogap with residual electronic density of states at the Fermi level. Moreover, the magnitude of the pseudogap of 120 K is extracted from NMR results, in agreement with the value obtained from the inelastic neutron-scattering experiment.en_US
dc.language.isoen_USen_US
dc.titleNMR evidence for the partially gapped state in CeOs2Al10en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.82.195129en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume82en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000284463000003en_US
dc.citation.woscount5en_US
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