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dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorKu, Ming-Cheen_US
dc.contributor.authorTsai, Wu-Weien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorTsai, Hung-Kuoen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.date.accessioned2019-04-02T05:59:43Z-
dc.date.available2019-04-02T05:59:43Z-
dc.date.issued2010-11-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3513334en_US
dc.identifier.urihttp://hdl.handle.net/11536/150191-
dc.description.abstractWe report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]en_US
dc.language.isoen_USen_US
dc.titlePolymer space-charge-limited transistor as a solid-state vacuum tube triodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3513334en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000284965000082en_US
dc.citation.woscount22en_US
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