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dc.contributor.authorYu, H. W.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorNguyen, H. Q.en_US
dc.contributor.authorChang, J. T.en_US
dc.contributor.authorChung, C. C.en_US
dc.contributor.authorKuo, C. I.en_US
dc.contributor.authorWong, Y. Y.en_US
dc.contributor.authorWang, W. C.en_US
dc.date.accessioned2019-04-02T05:59:41Z-
dc.date.available2019-04-02T05:59:41Z-
dc.date.issued2010-12-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3525158en_US
dc.identifier.urihttp://hdl.handle.net/11536/150207-
dc.description.abstractThe effect of substrate misorientation on the material quality of the N++-GaAs/P++-AlGaAs tunnel diodes (TDs) grown on these substrates is investigated. It is found that the misorientation influences both surface roughness and interface properties of the N++-GaAs/P++-AlGaAs TDs. Smooth surface (rms roughness: 1.54 angstrom) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10 degrees off toward [111] GaAs substrate was used. Besides, the oxygen content in N++-GaAs and P++-AlGaAs layers grown on the 10 degrees off GaAs substrates was reduced due to the reduction of sticking coefficient and number of anisotropic sites. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525158]en_US
dc.language.isoen_USen_US
dc.titleEffect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3525158en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000285364000029en_US
dc.citation.woscount6en_US
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