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dc.contributor.authorChang, Yi-Anen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorLaih, Li-Wenen_US
dc.contributor.authorLaih, Li-Hongen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2019-04-02T05:59:41Z-
dc.date.available2019-04-02T05:59:41Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.122301en_US
dc.identifier.urihttp://hdl.handle.net/11536/150213-
dc.description.abstractIn this study a novel p-emitter/window capping configuration design applied to a p(+)-n In0.5Ga0.5P solar cell is developed. By grading the Ga and Al compositions in the interface between the p-In0.5Ga0.5P emitter and p-In0.5Al0.5P window layers, the output characteristics of the p(+)-n In0.5Ga0.5P solar cell are improved. It is found that the photoluminescence (PL) intensity is increased and the minority carrier lifetime obtained from room-temperature time-resolved (TR) PL measurement can be increased from 5.3 ns of the typical design to 7.0 ns, indicating that the application of compositional grading can improve crystal quality and the interface becomes smoother, thus reducing the nonradiative recombination losses. Both the short-circuit current and open-circuit voltage are increased correspondingly and the conversion efficiency is improved from 14.57% of the typical design to 15.32% of the new p-emitter/window configuration under one-sun air-mass 1.5 global illumination. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEfficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configurationen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.122301en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000285632400028en_US
dc.citation.woscount6en_US
Appears in Collections:Articles