標題: Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
作者: Feng, Li-Wei
Chang, Yao-Feng
Chang, Chun-Yen
Chang, Ting-Chang
Wang, Shin-Yuan
Chiang, Pei-Wei
Lin, Chao-Cheng
Chen, Shih-Ching
Chen, Shih-Cheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistance switching;FeOx
公開日期: 30-十二月-2010
摘要: In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.08.165
http://hdl.handle.net/11536/150225
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.08.165
期刊: THIN SOLID FILMS
Volume: 519
起始頁: 1536
結束頁: 1539
顯示於類別:期刊論文