標題: | Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure |
作者: | Feng, Li-Wei Chang, Yao-Feng Chang, Chun-Yen Chang, Ting-Chang Wang, Shin-Yuan Chiang, Pei-Wei Lin, Chao-Cheng Chen, Shih-Ching Chen, Shih-Cheng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Resistance switching;FeOx |
公開日期: | 30-十二月-2010 |
摘要: | In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.08.165 http://hdl.handle.net/11536/150225 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.08.165 |
期刊: | THIN SOLID FILMS |
Volume: | 519 |
起始頁: | 1536 |
結束頁: | 1539 |
顯示於類別: | 期刊論文 |