完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, C. H. | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Yeh, F. S. | en_US |
dc.date.accessioned | 2019-04-02T05:59:52Z | - |
dc.date.available | 2019-04-02T05:59:52Z | - |
dc.date.issued | 2011-03-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2095820 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150252 | - |
dc.description.abstract | Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GeO2 | en_US |
dc.subject | HfON | en_US |
dc.subject | hopping conduction | en_US |
dc.subject | resistive random access memory (RRAM) | en_US |
dc.title | Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2010.2095820 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 32 | en_US |
dc.citation.spage | 366 | en_US |
dc.citation.epage | 368 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000287658400048 | en_US |
dc.citation.woscount | 29 | en_US |
顯示於類別: | 期刊論文 |