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dc.contributor.authorMerckling, C.en_US
dc.contributor.authorChang, Y. C.en_US
dc.contributor.authorLu, C. Y.en_US
dc.contributor.authorPenaud, J.en_US
dc.contributor.authorEl-Kazzi, M.en_US
dc.contributor.authorBellenger, F.en_US
dc.contributor.authorBrammertz, G.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorMeuris, M.en_US
dc.contributor.authorDekoster, J.en_US
dc.contributor.authorHeyns, M. M.en_US
dc.contributor.authorCaymax, M.en_US
dc.date.accessioned2019-04-02T05:59:51Z-
dc.date.available2019-04-02T05:59:51Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2010.09.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/150262-
dc.description.abstractA fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPassivationen_US
dc.subjectH2Sen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectHigh-mu semiconductorsen_US
dc.titleH2S molecular beam passivation of Ge(001)en_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2010.09.012en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume88en_US
dc.citation.spage399en_US
dc.citation.epage402en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000288524100019en_US
dc.citation.woscount8en_US
Appears in Collections:Articles