標題: High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
作者: Lin, Meng-Han
Wu, Ming-Chi
Huang, Yi-Han
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Oxygen vacancy;rapid thermal annealing (RTA);resistive random access memory (RRAM);SrZrO3 (SZO)
公開日期: 1-四月-2011
摘要: This paper reports the effects of rapid thermal annealing (RTA) on resistive switching (RS) characteristics and mechanisms of SrZrO3 (SZO)-based memory devices. SZO thin films were deposited on LaNiO3 (LNO) (100)/Pt/Ti/SiO2/Si using radio-frequency magnetron sputtering and were followed by an RTA process in N-2, Ar, and O-2 ambients, respectively, at various temperatures for improving RS performance. Experimental results indicate that an SZO device annealed in O-2 at 600 degrees C (O-2-600) exhibits stable RS properties and has a high device yield (similar to 90%), a reliable retention characteristic (up to 1 x 10(6) s at 100 degrees C), and steady nondestructive readout properties (over 1.4 x 10(4) s at 100 degrees C). However, by increasing RTA temperature to more than 700 degrees C, random formation of LNO (110) precipitates on the bottom surface of SZO grains might shorten the effective thickness of the SZO thin films. Furthermore, a strong electric field possibly occurs at the region between Al top electrodes and low-resistivity LNO precipitates. It is speculated that an RS phenomenon, which occurs within SZO grains instead of on grain boundaries, easily leads to RS failure, further resulting in severe degradation of device yield in the O-2-700 and O-2-800 devices. When compared with other devices, O-2-600 SZO memory devices exhibit highly reliable RS characteristics.
URI: http://dx.doi.org/10.1109/TED.2011.2104374
http://hdl.handle.net/11536/150265
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2104374
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
起始頁: 1182
結束頁: 1188
顯示於類別:期刊論文