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dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.date.accessioned2019-04-02T05:59:49Z-
dc.date.available2019-04-02T05:59:49Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3576076en_US
dc.identifier.urihttp://hdl.handle.net/11536/150274-
dc.description.abstractWe used atomic layer deposition with anodic aluminum oxide, to fabricate self-aligned TiO2 nanotube arrays, on a Si substrate, at 400 degrees C. Numerous p-n nanojunctions can be fabricated using this approach. In the absence of the external application of a bias voltage, these crystalline nanotubes make very sensitive ultraviolet sensors. The sensitivity is a result of the built-in voltage, generated by the nanojunction formed between the TiO2 nanotubes and the Si substrate, which separates electron-hole pairs and produces photocurrents. In addition, the one-dimensional structure of the TiO2 nanotubes provides a well-defined path for the transportation of the photo-generated carriers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3576076] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleUltraviolet Photoresponse of TiO2 Nanotube Arrays Fabricated by Atomic Layer Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3576076en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume14en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000289165400028en_US
dc.citation.woscount8en_US
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