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dc.contributor.authorLin, Kuan-Liangen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorShieh, Jiannen_US
dc.contributor.authorLin, Jun-Hungen_US
dc.contributor.authorChou, Cheng-Tungen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.date.accessioned2019-04-02T05:58:49Z-
dc.date.available2019-04-02T05:58:49Z-
dc.date.issued2011-04-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3567915en_US
dc.identifier.urihttp://hdl.handle.net/11536/150297-
dc.description.abstractThis study investigates bipolar and nonpolar resistive-switching of HfO2 with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO2 strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567915]en_US
dc.language.isoen_USen_US
dc.titleElectrode dependence of filament formation in HfO2 resistive-switching memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3567915en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume109en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000290047000138en_US
dc.citation.woscount151en_US
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