標題: Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
作者: Trinh, H. D.
Brammertz, G.
Chang, E. Y.
Kuo, C. I.
Lu, C. Y.
Lin, Y. C.
Nguyen, H. Q.
Wong, Y. Y.
Tran, B. T.
Kakushima, K.
Iwai, H.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al2O3;atomic layer deposition (ALD);C-V simulation;InAs;metal-oxide-semiconductor capacitors (MOSCAPs);surface treatment
公開日期: 1-六月-2011
摘要: Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C-V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (< 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
URI: http://dx.doi.org/10.1109/LED.2011.2128853
http://hdl.handle.net/11536/150314
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2128853
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
起始頁: 752
結束頁: 754
顯示於類別:期刊論文