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dc.contributor.authorHuang, J. K.en_US
dc.contributor.authorHuang, Cheng-Liangen_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2019-04-02T05:58:53Z-
dc.date.available2019-04-02T05:58:53Z-
dc.date.issued2011-05-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.01.059en_US
dc.identifier.urihttp://hdl.handle.net/11536/150335-
dc.description.abstractIn the application of contact glue layer for semiconductor devices, a nitrogen/hydrogen (N-2/H-2) plasma treatment is usually used to reduce the amount of C and O impurities of metallorganic chemical vapor deposition titanium nitride (MOCVD-TiN) films. This study found that the sheet resistance of as-deposited MOCVD-TiN film without N-2/H-2 plasma treatment dramatically increased with exposure time due to moisture adsorption. Increasing plasma treatment power and time was able to retard the increase in sheet resistance. From residue gas analysis at 200 degrees C, it was found that the amount of H2O outgases from the MOCVD-TiN films decreased with increasing plasma treatment power and time. TEM images reveal that the surface of the MOCVD-TiN films became compact as it received more plasma treatment energy, making it difficult for the external moisture to diffuse into and react with the MOCVD-TiN films. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTiNen_US
dc.subjectMOCVDen_US
dc.subjectPlasmaen_US
dc.subjectAgingen_US
dc.titleEffect of N-2/H-2 plasma treatment on the moisture adsorption of MOCVD-TiN filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2011.01.059en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume519en_US
dc.citation.spage4948en_US
dc.citation.epage4951en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000292471400059en_US
dc.citation.woscount3en_US
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