標題: Ir Nanocrystals on Asymmetric Si3N4/SiO2 Tunneling Layer with Large Memory Window for Nonvolatile Memory Application
作者: Wang, Terry Tai-Jui
Chen, Chao-Jui
Teng, I-Ju
Hsieh, Ing-Jar
Kuo, Cheng-Tzu
材料科學與工程學系
奈米科技中心
Department of Materials Science and Engineering
Center for Nanoscience and Technology
關鍵字: Nonvolatile Memory;Nano-Crystal;Iridium;Asymmetric Tunnel Barrier
公開日期: 1-Apr-2011
摘要: The capacitance-voltage measurements and microstructures of Iridium-nanocrystals embedded in two main stack devices of "Al/SiO2/Ir-NCs/SiO2/Si-Sub/Al" and "Al/SiO2/Ir-NCs/Si3N4/SiO2/SiSub/Al" have been compared for the application of nonvolatile memory. It has been demonstrated that the device performance of Si3N4/SiO2 tunneling bi-layer (former stack) is much better than the single SiO2 tunneling layer in terms of program/erase (P/E) efficiency and memory window size (up to 12.6 V at +/-10 V sweeping voltages), though 5% degrade in data retentions. Furthermore, endurances of two devices can stand 10(4) cycles without failure under P/E stressing condition of +/-9 V, 100 ms.
URI: http://dx.doi.org/10.1166/nnl.2011.1161
http://hdl.handle.net/11536/150347
ISSN: 1941-4900
DOI: 10.1166/nnl.2011.1161
期刊: NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume: 3
起始頁: 235
結束頁: 239
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