完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Chi-Ting | en_US |
dc.contributor.author | Lee, Wen-Hsi | en_US |
dc.contributor.author | Chang, Shih-Chieh | en_US |
dc.contributor.author | Cheng, Yi-Lung | en_US |
dc.contributor.author | Wang, Ying-Lang | en_US |
dc.date.accessioned | 2019-04-02T05:58:56Z | - |
dc.date.available | 2019-04-02T05:58:56Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 1941-4900 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/nnl.2011.1151 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150349 | - |
dc.description.abstract | In this study, the effects of TiNx capping layers on the thermal stability of nickel silicides have been investigated in a rapid thermal annealing (RTA) process. Various TiNx films were deposited on the nickel film by different N-2 flow rates. It was found that the TINx capping layer could improve the thermal stability of nickel silicides and suppress silicide agglomeration. The TINx film deposited with higher N-2 flow rates had better thermal stability than those with lower N-2 flow rates. The corrosion behaviors of the TINx films deposited with various N-2 flow rates and nickel films in the H2SO4:H2O2 (4:1) solution were investigated. We found that the corrosion currents (I-corr) of the nickel and NiSi films were much higher than those of the TiNx films, while the I-corr of the TiNx films deposited with higher N-2 flow rates was much lower than that of the TiNx films deposited with lower N-2 flow rates. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Silicide | en_US |
dc.subject | TiNx | en_US |
dc.subject | Capping Layer | en_US |
dc.subject | Selectivity Etching | en_US |
dc.title | Enhancement of the Thermal Stability of TiNx Capping Layer on the Nickel Silicides | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/nnl.2011.1151 | en_US |
dc.identifier.journal | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.spage | 272 | en_US |
dc.citation.epage | 275 | en_US |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000293211300032 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |