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dc.contributor.authorWu, Chi-Tingen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2019-04-02T05:58:56Z-
dc.date.available2019-04-02T05:58:56Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn1941-4900en_US
dc.identifier.urihttp://dx.doi.org/10.1166/nnl.2011.1151en_US
dc.identifier.urihttp://hdl.handle.net/11536/150349-
dc.description.abstractIn this study, the effects of TiNx capping layers on the thermal stability of nickel silicides have been investigated in a rapid thermal annealing (RTA) process. Various TiNx films were deposited on the nickel film by different N-2 flow rates. It was found that the TINx capping layer could improve the thermal stability of nickel silicides and suppress silicide agglomeration. The TINx film deposited with higher N-2 flow rates had better thermal stability than those with lower N-2 flow rates. The corrosion behaviors of the TINx films deposited with various N-2 flow rates and nickel films in the H2SO4:H2O2 (4:1) solution were investigated. We found that the corrosion currents (I-corr) of the nickel and NiSi films were much higher than those of the TiNx films, while the I-corr of the TiNx films deposited with higher N-2 flow rates was much lower than that of the TiNx films deposited with lower N-2 flow rates.en_US
dc.language.isoen_USen_US
dc.subjectSilicideen_US
dc.subjectTiNxen_US
dc.subjectCapping Layeren_US
dc.subjectSelectivity Etchingen_US
dc.titleEnhancement of the Thermal Stability of TiNx Capping Layer on the Nickel Silicidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/nnl.2011.1151en_US
dc.identifier.journalNANOSCIENCE AND NANOTECHNOLOGY LETTERSen_US
dc.citation.volume3en_US
dc.citation.spage272en_US
dc.citation.epage275en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000293211300032en_US
dc.citation.woscount0en_US
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