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dc.contributor.authorMerckling, C.en_US
dc.contributor.authorChang, Y. C.en_US
dc.contributor.authorLu, C. Y.en_US
dc.contributor.authorPenaud, J.en_US
dc.contributor.authorBrammertz, G.en_US
dc.contributor.authorScarrozza, M.en_US
dc.contributor.authorPourtois, G.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorDekoster, J.en_US
dc.contributor.authorMeuris, M.en_US
dc.contributor.authorHeyns, M.en_US
dc.contributor.authorCaymax, M.en_US
dc.date.accessioned2019-04-02T05:58:57Z-
dc.date.available2019-04-02T05:58:57Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.susc.2011.06.008en_US
dc.identifier.urihttp://hdl.handle.net/11536/150356-
dc.description.abstractThe integration of higher carrier mobility materials to increase drive current capability in the next CMOS generations is required for device scaling. But a fundamental issue regarding the introduction of high-mobility III-V in CMOS is the electrical passivation of the interface with the high-kappa gate dielectric. In this work, we show that in situ H2S surface treatment on GaAs(001) leads to a stable and reorganized oxide/III-V interface. The exposition of the GaAs surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. Finally, MOS capacitors are fabricated to extract interface state density over the band gap. These results highlight a promising re-interest in chalcogenide passivation of III-V surfaces for CMOS applications. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGaAsen_US
dc.subjectH2S passivationen_US
dc.subjectHigh-kappa dielectricsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectCMOSen_US
dc.titleDefect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.susc.2011.06.008en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume605en_US
dc.citation.spage1778en_US
dc.citation.epage1783en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000294237600004en_US
dc.citation.woscount8en_US
Appears in Collections:Articles