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dc.contributor.authorHuang, Chen-Shuoen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2019-04-02T05:58:57Z-
dc.date.available2019-04-02T05:58:57Z-
dc.date.issued2011-08-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3627187en_US
dc.identifier.urihttp://hdl.handle.net/11536/150358-
dc.description.abstractThis investigation demonstrates the effect of high-pressure H2O treatment on the elimination of the interfacial germanium suboxide (GeOX) layer between ZrO2 and Ge. The formation of GeOX interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H2O treatment eliminates the interfacial GeOX layer. The physical mechanism involves the oxidation of non-oxidized Zr with H2O and the reduction of GeOX by H-2. Treatment with H2O reduces the gate-leakage current of a ZrO2/Ge capacitor by a factor of 1000. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627187]en_US
dc.language.isoen_USen_US
dc.titleEffect of high-pressure H2O treatment on elimination of interfacial GeOX layer between ZrO2 and Ge stacken_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3627187en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000294359100056en_US
dc.citation.woscount4en_US
Appears in Collections:Articles