Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Abstract

Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]