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dc.contributor.authorChen, C. W.en_US
dc.contributor.authorHung, S. C.en_US
dc.contributor.authorYang, M. D.en_US
dc.contributor.authorYeh, C. W.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorChi, G. C.en_US
dc.contributor.authorRen, F.en_US
dc.contributor.authorPearton, S. J.en_US
dc.date.accessioned2014-12-08T15:21:11Z-
dc.date.available2014-12-08T15:21:11Z-
dc.date.issued2011-12-12en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3668105en_US
dc.identifier.urihttp://hdl.handle.net/11536/15036-
dc.description.abstractThe electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O(2)) at room temperature. The monolayer graphene, grown by chemical vapor deposition with perfect uniformity within 1 cm x 1 cm will attach O(2) molecules and enhance the hole conductivity, which will lead to a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O(2) concentration and the detection limit of the simple O(2) sensor was 1.25% in volume ratio. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3668105]en_US
dc.language.isoen_USen_US
dc.titleOxygen sensors made by monolayer graphene under room temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3668105en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.citation.issue24en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000298254200062-
dc.citation.woscount23-
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