完整後設資料紀錄
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dc.contributor.authorChen, Liang-Hsiangen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorHo, Jia-Chongen_US
dc.contributor.authorLee, Cheng-Chungen_US
dc.contributor.authorKim, Choongiken_US
dc.contributor.authorChen, Ming-Chouen_US
dc.date.accessioned2019-04-02T05:59:03Z-
dc.date.available2019-04-02T05:59:03Z-
dc.date.issued2011-08-01en_US
dc.identifier.issn0379-6779en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.synthmet.2011.05.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/150371-
dc.description.abstractThis study reports the preparation and characterization of polyimide/Ta2O5 nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta2O5 precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2-3 with carrier mobility values as high as 0.38 cm(2)/Vs. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectOrganic thin-film transistors (OTFTs)en_US
dc.subjectNanocompositeen_US
dc.subjectHybrid filmsen_US
dc.subjectGate insulatoren_US
dc.titlePolyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.synthmet.2011.05.002en_US
dc.identifier.journalSYNTHETIC METALSen_US
dc.citation.volume161en_US
dc.citation.spage1527en_US
dc.citation.epage1531en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000294971700012en_US
dc.citation.woscount13en_US
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