完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Chin-Hung | en_US |
dc.contributor.author | Chen, Chia-Hsiang | en_US |
dc.contributor.author | Chen, Szu-Ying | en_US |
dc.contributor.author | Yen, Yu-Ting | en_US |
dc.contributor.author | Kuo, Wei-Chen | en_US |
dc.contributor.author | Liao, Yu-Kuang | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Lai, Chih-Huang | en_US |
dc.contributor.author | Chen, Lih-Juann | en_US |
dc.contributor.author | Chueh, Yu-Lun | en_US |
dc.date.accessioned | 2019-04-02T05:59:07Z | - |
dc.date.available | 2019-04-02T05:59:07Z | - |
dc.date.issued | 2011-10-01 | en_US |
dc.identifier.issn | 1530-6984 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/nl202673k | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150388 | - |
dc.description.abstract | In this paper, we demonstrated direct formation of large area Cu(In,Ga)Se-2, nanotip arrays (GIGS NTRs) by using one step Ar+ milling process without template. By controlling milling time and incident angles, the length of CIGS NTRs with adjustable tilting orientations can be precisely controlled. Formation criteria of these CIGS NTRs have been discussed in terms of surface curvature, multiple components, and crystal quality, resulting in a highly anisotropic milling effect. The CIGS NTRs have very low reflectance <0.1% at incident wavelengths between 300 to 1200 nm. Open circuit voltage and short circuit current of CIGS NTRs solar cell were measured to be similar to 390 mV and similar to 22.56 mA/cm(2), yielding the filling factor and the efficiency of 59 and 5.2%, respectively. In contrast to CIGS thin film solar cell with efficiency of 3.2%, the nanostructured CIGS NTRs can have efficiency enhancement of similar to 160% due to the higher light absorption ability because of the nanostructure. The merits of current approach include the latest way via template-free direct creating process of nanostructured CIGS NTRs with controllable dimensionality and large scale production without postselenization process. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Cu(In,Ga)Se-2 nanotip arrays | en_US |
dc.subject | milling process | en_US |
dc.subject | postseleneizatoin | en_US |
dc.subject | solar cell | en_US |
dc.title | Large Scale Single-Crystal Cu(In,Ga)Se-2 Nanotip Arrays For High Efficiency Solar Cell | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/nl202673k | en_US |
dc.identifier.journal | NANO LETTERS | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.spage | 4443 | en_US |
dc.citation.epage | 4448 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000295667000074 | en_US |
dc.citation.woscount | 45 | en_US |
顯示於類別: | 期刊論文 |