完整後設資料紀錄
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dc.contributor.authorChiu, Shang-Juien_US
dc.contributor.authorLiu, Yen-Tingen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorYu, Ge-Pingen_US
dc.contributor.authorHuang, Jia-Hongen_US
dc.date.accessioned2019-04-02T05:59:38Z-
dc.date.available2019-04-02T05:59:38Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.019en_US
dc.identifier.urihttp://hdl.handle.net/11536/150398-
dc.description.abstractAsymmetric superlattice structures consisting of multiferroic BiFeO3 (BFO) and paraelectric SrTiO3 (STO) sublayers were grown on a Nb-doped STO substrate by RF magnetron sputtering at temperatures in the range 500-800 degrees C. For substrate temperatures less than 500 degrees C and at 800 degrees C, only poorly crystalline films resulted, whereas a BFO/STO superlattice structure film of great crystalline quality was obtained for a substrate temperature in the range 550-750 degrees C. The formation of a superlattice structure was confirmed through both the appearance of Bragg lines separated by Kiessig fringes in X-ray reflectivity curves and the satellite features of a (002) diffraction pattern. The clearly discernible main and satellite features on both sides of the substrate about the (002) STO Bragg peak of superlattice films indicate the high quality of the BFO/STO artificial superlattice structure. For BFO/STO superlattice films deposited at 600-700 degrees C, the increased crystalline quality with smaller interface roughness correlates with larger lattice strain and remanent polarization of the film. The lattice strain and interface quality might be important factors that influence the leakage and ferroelectric properties in BFO/STO artificial superlattices. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectX-ray diffractionen_US
dc.subjectRF sputteringen_US
dc.subjectThin film/epitaxial growthen_US
dc.subjectFerroelectric materialsen_US
dc.titleGrowth of BiFeO3/SrTiO3 artificial superlattice structure by RF sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2011.08.019en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume334en_US
dc.citation.spage90en_US
dc.citation.epage95en_US
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000296269000015en_US
dc.citation.woscount10en_US
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