Studies on damage removing efficiency of B-11(+) and BF2+ implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

Abstract

High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B-11(+) and 100 keV BF2+ ions at a dose of 1 x 10(15) ions/cm(2) and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750 degrees C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B-11(+) implanted samples than from those implanted with BF2+. (C) 1996 American Institute of Physics.