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dc.contributor.authorChantarat, N.en_US
dc.contributor.authorChen, Yu-Weien_US
dc.contributor.authorLin, Chin-Chingen_US
dc.contributor.authorChiang, Mei-Chingen_US
dc.contributor.authorChen, Yu-Chunen_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2019-04-02T05:58:00Z-
dc.date.available2019-04-02T05:58:00Z-
dc.date.issued2011-11-24en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp206091sen_US
dc.identifier.urihttp://hdl.handle.net/11536/150413-
dc.description.abstractIn this study, tin oxide (SnO2) solution mixtures containing indium (In) of 0%, 3%, 7%, 15%, and 30% were used to fabricate In- and N-codoped SnO2 films on glass at 400 degrees C using an ultrasonic spray pyrolysis method combined with thermal annealing at 600 degrees C and post nitrogen plasma treatment. X-ray diffraction analysis demonstrated that the incorporation of elemental In in the SnO2 film primarily induces the evolution of crystalline phases from In-doped SnO2 to Sn-doped In2O3, depending on the doping concentration. Upon exposure to N plasma, the dark current dramatically increases in proportion to the treatment duration (5-40 min); the dark current can be enhanced for the 3% and 7%-doped samples by as much as 3 orders of magnitude compared to the untreated samples. Hall measurements confirmed that hole carriers could dominate the SnO2 host matrix to promote p-type properties at a low In content (3% and 7%) with an increase in resistance compared to undoped samples. However, samples with higher In content (15% and 30%) showed the opposite trend, due to the formation of a secondary phase of n-type In2O3. X-ray photoelectron spectroscopy was used to probe the incorporation and dissociation of chemical bonds between the doped In and N atoms in the SnO2. Moreover, depth profile measurements showed a correlation between the elemental compositions and elemental distributions of the codoped SnO2 film. Current-voltage (I-V) characterization revealed the improved behavior of heterojunction diodes consisting of a p-type (In, N)-doped SnO2 thin film deposited on n-type ZnO nanorod arrays.en_US
dc.language.isoen_USen_US
dc.titleNitrogen Plasma-Assisted Codoped P-type (In, N):SnO2 Ultra-Fine Thin Films and N-ZnO/p-In:SnO2 Core-Shell Heterojunction Diodes Fabricated by an Ultrasonic Spray Pyrolysis Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp206091sen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.spage23113en_US
dc.citation.epage23119en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000297001000056en_US
dc.citation.woscount7en_US
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