完整後設資料紀錄
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dc.contributor.authorKuo, H. Y.en_US
dc.contributor.authorShu, Y. C.en_US
dc.contributor.authorChen, H. Z.en_US
dc.contributor.authorHsueh, C. J.en_US
dc.contributor.authorWang, C. H.en_US
dc.contributor.authorChu, Y. H.en_US
dc.date.accessioned2019-04-02T05:58:00Z-
dc.date.available2019-04-02T05:58:00Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0955-2219en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jeurceramsoc.2011.04.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/150414-
dc.description.abstractMixed phases of rhombohedral and tetragonal ferroelectric variants have been recently observed to coexist through epitaxial constraints in bismuth ferrite films. They form stripe-like domain patterns with orientations closely parallel to the substrate edges and exhibit unusually large piezoelectric response in the stripe areas. Here a model is developed for explaining the peculiar domain orientations as well as the enhancement of piezoelectricity in the mixed phase. The former is determined by the relative magnitudes of elastic and depolarization energy, whereas the latter is ascribed to the strain-driven softening in dielectric stiffness. The predictions show the similar trend as those observed in recent experiments. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBismuth ferriteen_US
dc.subjectDomain patternen_US
dc.subjectEpitaxial filmen_US
dc.subjectPiezoelectricityen_US
dc.titleInvestigation of nanodomain pattern and piezoelectric behavior of mixed phases in epitaxial BiFeO3 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jeurceramsoc.2011.04.010en_US
dc.identifier.journalJOURNAL OF THE EUROPEAN CERAMIC SOCIETYen_US
dc.citation.volume31en_US
dc.citation.spage3063en_US
dc.citation.epage3071en_US
dc.contributor.department土木工程學系zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Civil Engineeringen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000297178300004en_US
dc.citation.woscount8en_US
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