完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Binh-Tinh Tran | en_US |
dc.contributor.author | Chang, Edward-Yi | en_US |
dc.contributor.author | Lin, Kung-Liang | en_US |
dc.contributor.author | Wong, Yuen-Yee | en_US |
dc.contributor.author | Sahoo, Kartika Chandra | en_US |
dc.contributor.author | Lin, Hsiao-Yu | en_US |
dc.contributor.author | Huang, Man-Chi | en_US |
dc.contributor.author | Hong-Quan Nguyen | en_US |
dc.contributor.author | Lee, Ching-Ting | en_US |
dc.contributor.author | Hai-Dang Trinh | en_US |
dc.date.accessioned | 2019-04-02T05:57:55Z | - |
dc.date.available | 2019-04-02T05:57:55Z | - |
dc.date.issued | 2011-11-01 | en_US |
dc.identifier.issn | 1882-0778 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/APEX.4.115501 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150428 | - |
dc.description.abstract | High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/APEX.4.115501 | en_US |
dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
dc.citation.volume | 4 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000298289700035 | en_US |
dc.citation.woscount | 6 | en_US |
顯示於類別: | 期刊論文 |