標題: Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
作者: Wu, Ming-Chi
Wu, Tsung-Han
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2012
摘要: The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2 thin film after the memory device is annealed at 600 degrees C in N-2 ambient for 60 s without any chemical reaction between Co and ZrO2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of 1.5 similar to 2.8V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1 similar to-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3674322]
URI: http://dx.doi.org/10.1063/1.3674322
http://hdl.handle.net/11536/150446
ISSN: 0021-8979
DOI: 10.1063/1.3674322
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 111
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