标题: High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks
作者: Chiu, Ching-Hsueh
Lin, Chien-Chung
Han, Hau-Vei
Liu, Che-Yu
Chen, Yan-Hao
Lan, Yu-Pin
Yu, Peichen
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Chang, Chun-Yen
光电系统研究所
电子工程学系及电子研究所
光电工程学系
光电工程研究所
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
公开日期: 3-二月-2012
摘要: In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO2 nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO2 nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO2 nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs.
URI: http://dx.doi.org/10.1088/0957-4484/23/4/045303
http://hdl.handle.net/11536/150450
ISSN: 0957-4484
DOI: 10.1088/0957-4484/23/4/045303
期刊: NANOTECHNOLOGY
Volume: 23
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