标题: | High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks |
作者: | Chiu, Ching-Hsueh Lin, Chien-Chung Han, Hau-Vei Liu, Che-Yu Chen, Yan-Hao Lan, Yu-Pin Yu, Peichen Kuo, Hao-Chung Lu, Tien-Chang Wang, Shing-Chung Chang, Chun-Yen 光电系统研究所 电子工程学系及电子研究所 光电工程学系 光电工程研究所 Institute of Photonic System Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of EO Enginerring |
公开日期: | 3-二月-2012 |
摘要: | In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO2 nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO2 nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO2 nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs. |
URI: | http://dx.doi.org/10.1088/0957-4484/23/4/045303 http://hdl.handle.net/11536/150450 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/23/4/045303 |
期刊: | NANOTECHNOLOGY |
Volume: | 23 |
显示于类别: | Articles |