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dc.contributor.authorPignalos, P.en_US
dc.contributor.authorLee, H.en_US
dc.contributor.authorQiao, L.en_US
dc.contributor.authorTseng, M.en_US
dc.contributor.authorYi, Y.en_US
dc.date.accessioned2019-04-03T06:36:35Z-
dc.date.available2019-04-03T06:36:35Z-
dc.date.issued2011-09-01en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3624838en_US
dc.identifier.urihttp://hdl.handle.net/11536/150453-
dc.description.abstractAntireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60 degrees) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3624838]en_US
dc.language.isoen_USen_US
dc.titleGraded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3624838en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume1en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000302139600024en_US
dc.citation.woscount10en_US
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