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完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorTsai, MSen_US
dc.contributor.authorSun, SCen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2019-04-02T05:59:33Z-
dc.date.available2019-04-02T05:59:33Z-
dc.date.issued1998-01-01en_US
dc.identifier.issn1058-4587en_US
dc.identifier.urihttp://dx.doi.org/10.1080/10584589808202061en_US
dc.identifier.urihttp://hdl.handle.net/11536/150470-
dc.description.abstractThe dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.en_US
dc.language.isoen_USen_US
dc.subjectBSTen_US
dc.subjectannealingen_US
dc.subjectoxygen vacancyen_US
dc.subjectleakage currenten_US
dc.titleElectrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1080/10584589808202061en_US
dc.identifier.journalINTEGRATED FERROELECTRICSen_US
dc.citation.volume21en_US
dc.citation.spage173en_US
dc.citation.epage183en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000076544100017en_US
dc.citation.woscount5en_US
顯示於類別：期刊論文


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