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dc.contributor.authorPuttaswamy, Srinivasu Valagerahallyen_US
dc.contributor.authorLin, Chih-Hengen_US
dc.contributor.authorSivashankar, Shilpaen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.authorLiu, Cheng-Hsienen_US
dc.date.accessioned2019-04-02T05:58:09Z-
dc.date.available2019-04-02T05:58:09Z-
dc.date.issued2013-03-01en_US
dc.identifier.issn0925-4005en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.snb.2013.01.016en_US
dc.identifier.urihttp://hdl.handle.net/11536/150491-
dc.description.abstractThe sensitivity of biosensors can be affected by mass transport limitations as a result of miniaturization. To enhance signal sensitivity, pre-concentration of deoxyribonucleic acid (DNA), in the vicinity of the sensing elements of n-type polycrystalline silicon nanowire field effect transistor (Poly-Si NWFET) is demonstrated using a microfluidic device based on insulator or gradient dielectrophoresis (iDEP) to overcome mass transport limitations. In insulator-based dielectrophoresis (iDEP), insulating microstructures produce non-uniform electric fields to drive dielectrophoresis (DEP) in microsystems. Fabrication of accurately controlled three-dimensional (3D) microstructure of poly (ethylene glycol) diacrylate (PEG-DA) with a narrow microchannel using maskless gray-scale lithography is described. The fabrication of three-dimensional structures at low cost with saving time is accomplished by the use of maskless exposure system. PEG-DA has been used due to its excellent biocompatibility and ease of fabrication. To enhance the stability of PEG-DA, we added another polymer pentaerythritol tetraacrylate (PETA). Electrical property of the Poly-Si NWFET is ensured by plotting I-V-G curve after the integration of iDEP micro device. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFET biosensorsen_US
dc.subjectiDEPen_US
dc.subjectSensitivityen_US
dc.subjectMaskless photolithographyen_US
dc.titleElectrodeless dielectrophoretic concentrator for analyte pre-concentration on poly-silicon nanowire field effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.snb.2013.01.016en_US
dc.identifier.journalSENSORS AND ACTUATORS B-CHEMICALen_US
dc.citation.volume178en_US
dc.citation.spage547en_US
dc.citation.epage554en_US
dc.contributor.department生物科技學院zh_TW
dc.contributor.departmentCollege of Biological Science and Technologyen_US
dc.identifier.wosnumberWOS:000315751100072en_US
dc.citation.woscount9en_US
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