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dc.contributor.authorGuo, JDen_US
dc.contributor.authorLin, CIen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorChi, GCen_US
dc.contributor.authorLee, CTen_US
dc.date.accessioned2014-12-08T15:02:54Z-
dc.date.available2014-12-08T15:02:54Z-
dc.date.issued1996-01-08en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.116471en_US
dc.identifier.urihttp://hdl.handle.net/11536/1504-
dc.description.abstractOhmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleA bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.116471en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume68en_US
dc.citation.issue2en_US
dc.citation.spage235en_US
dc.citation.epage237en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TN79600033-
dc.citation.woscount63-
Appears in Collections:Articles