A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

doi:10.1063/1.116471

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Guo, JD	en_US
dc.contributor.author	Lin, CI	en_US
dc.contributor.author	Feng, MS	en_US
dc.contributor.author	Pan, FM	en_US
dc.contributor.author	Chi, GC	en_US
dc.contributor.author	Lee, CT	en_US
dc.date.accessioned	2014-12-08T15:02:54Z	-
dc.date.available	2014-12-08T15:02:54Z	-
dc.date.issued	1996-01-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.116471	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1504	-
dc.description.abstract	Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.116471	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	68	en_US
dc.citation.issue	2	en_US
dc.citation.spage	235	en_US
dc.citation.epage	237	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996TN79600033	-
dc.citation.woscount	63	-
顯示於類別：	期刊論文