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dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLin, T. H.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2019-04-03T06:47:40Z-
dc.date.available2019-04-03T06:47:40Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/150/4/042062en_US
dc.identifier.urihttp://hdl.handle.net/11536/150524-
dc.description.abstractThermodynamically YMnO3 (YMO) can only exist with hexagonal structure at ambient conditions. In this study, we demonstrate that the stain between film and substrate can play an important role in forming orthorhombic YMO (o-YMO). o-YMO films with nearly perfect crystallographic orientation alignment were obtained on LaAlO3(110) substrates. These films allow us to unambiguously disclose the intrinsic magnetic property and electronic structure anisotropies along different crystallographic orientations. The antiferromagnetic (AFM) phase transition was around 42 K. Moreover, we observed a signature of spin reordering at lower temperatures when the applied field was parallel to the a- or c-axis. On the other hand, only the AFM transition was observed when the field is parallel to the b-axis. By comparing the X-ray absorption spectroscopy (XAS) results to standard manganese oxides, YMnO3 exhibits the dominant Mn+3 characteristics as that obtained from the standard Mn2O3 powder. The polarization dependent XAS also revealed anisotropic bonding behavior along each crystalline axis.en_US
dc.language.isoen_USen_US
dc.titleElectronic Structure and Magnetic Anisotropies in Orthorhombic Multiferroic YMnO3 Thin Filmsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1742-6596/150/4/042062en_US
dc.identifier.journal25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISMen_US
dc.citation.volume150en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000289891200062en_US
dc.citation.woscount5en_US
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