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dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:21:12Z-
dc.date.available2014-12-08T15:21:12Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3665871en_US
dc.identifier.urihttp://hdl.handle.net/11536/15052-
dc.description.abstractResistive switching behaviors are studied for the rapid thermal annealing (RTA) Ga(2)O(3) thin film embedding a Cr metal layer. By modifying the thickness, area, and RTA temperature of the device, the thermal-induced resistive switching is similar to those induced by the electrical forming process. The conducting filaments composed of oxygen vacancies are created by the Cr diffusion and oxidization during RTA. The related carrier conduction mechanism obeys space charge limited conduction theory accompanied by the formation/rupture of the conducting filaments at the interface between Ti and Cr:Ga(2)O(3) film. This study demonstrates a convenient process to fabricate forming-free resistive switching memory devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665871]en_US
dc.language.isoen_USen_US
dc.titleForming-free resistive switching behaviors in Cr-embedded Ga(2)O(3) thin film memoriesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3665871en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume110en_US
dc.citation.issue11en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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