Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Lin, D. W.	en_US
dc.contributor.author	Lin, C. C.	en_US
dc.contributor.author	Li, Z. Y.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.contributor.author	Liao, W. T.	en_US
dc.contributor.author	Tanikawa, T.	en_US
dc.contributor.author	Honda, Y.	en_US
dc.contributor.author	Yamaguchi, M.	en_US
dc.contributor.author	Sawaki, N.	en_US
dc.date.accessioned	2019-04-02T06:04:32Z	-
dc.date.available	2019-04-02T06:04:32Z	-
dc.date.issued	2011-01-01	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150539	-
dc.description.abstract	The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000295612403201	en_US
dc.citation.woscount	0	en_US
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