標題: EFFECT OF THE MIXED N-2/O-2 OXIDATION PROCESS ON IMPROVEMENT OF THE SENSITIVITY OF THE SIGE NANO-WIRE
作者: Chang, Kow-Ming
Chen, Chu-Feng
Lai, Chiung-Hui
Wang, Yu-Bin
Liu, Chung-Hsien
Hsieh, Cheng-Ting
Wu, Chin-Ning
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2011
摘要: Ge condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire exhibits higher sensitivity. In this work, we investigated the effect of different oxidation recipe to provide information on the sensitivity of SiGe nano-wire. The 3-amino-propyltrime-thoxy-silane (APTMS) is used to modify the nano-wire's surface potential. Induced sensitivity characteristics of the samples were preformed to estimate the improvement effect. The mixed N-2/O-2 oxidation process with optimization ratio can be an effective technology to improve the sensitivity of SGOI nano-wires.
URI: http://dx.doi.org/10.1149/1.3653933
http://hdl.handle.net/11536/150553
ISSN: 1938-5862
DOI: 10.1149/1.3653933
期刊: SENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 219TH ECS MEETING
Volume: 35
起始頁: 145
結束頁: 154
Appears in Collections:Conferences Paper