Title: | EFFECT OF THE MIXED N-2/O-2 OXIDATION PROCESS ON IMPROVEMENT OF THE SENSITIVITY OF THE SIGE NANO-WIRE |
Authors: | Chang, Kow-Ming Chen, Chu-Feng Lai, Chiung-Hui Wang, Yu-Bin Liu, Chung-Hsien Hsieh, Cheng-Ting Wu, Chin-Ning 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Jan-2011 |
Abstract: | Ge condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire exhibits higher sensitivity. In this work, we investigated the effect of different oxidation recipe to provide information on the sensitivity of SiGe nano-wire. The 3-amino-propyltrime-thoxy-silane (APTMS) is used to modify the nano-wire's surface potential. Induced sensitivity characteristics of the samples were preformed to estimate the improvement effect. The mixed N-2/O-2 oxidation process with optimization ratio can be an effective technology to improve the sensitivity of SGOI nano-wires. |
URI: | http://dx.doi.org/10.1149/1.3653933 http://hdl.handle.net/11536/150553 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3653933 |
Journal: | SENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 219TH ECS MEETING |
Volume: | 35 |
Begin Page: | 145 |
End Page: | 154 |
Appears in Collections: | Conferences Paper |