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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHan, Hau-Veien_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorChen, Yan-Haoen_US
dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorYen, Chun Changen_US
dc.date.accessioned2019-04-02T06:04:14Z-
dc.date.available2019-04-02T06:04:14Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/150564-
dc.description.abstractWe fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current and great enhancement of the light output (65% at 20mA) compared with the conventional LEDs.en_US
dc.language.isoen_USen_US
dc.titleHigh Efficiency GaN-based Light Emitting Diodes with Embedded Air Voids/SiO2 Nanomasksen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000310362401499en_US
dc.citation.woscount0en_US
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