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dc.contributor.authorChiu, Yu-Shengen_US
dc.contributor.authorHuang, Jui-Chienen_US
dc.contributor.authorLin, Tai-Mingen_US
dc.contributor.authorChou, Yu-Tingen_US
dc.contributor.authorLu, Chung-Yuen_US
dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T06:04:19Z-
dc.date.available2019-04-02T06:04:19Z-
dc.date.issued2012-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150573-
dc.description.abstractWe present the Rf characteristics of 0.7-mu m gate length n-GaN/AlGaN/GaN high-electron mobility transistors (HEMTs) with different source-drain spacing tested under different temperatures.. The 7-mu m source-drain spacing device demonstrated 800 mA/mm drain current density and 257 mS/mm tranceconductance, and the 5-mu m source-drain spacing device demonstrated 700 mA/mm drain current density and 260 mS/mm tranconductance. The 7-mu m source-drain spacing device was measured at room temperatures of 25 degrees C and -40 degrees C, the current gain (f(T)) were 18 GHz and 21GHz and the maximum oscillation (f(max)(U)) frequency were 63 GHz-and 87 GHz, respectively The f(T) was nearly linearly dependent on the temperature. As operating temperature increased from -40 degrees C to 50 degrees C, the f(T) dropped more dramatically for the 5-mu m SD spacing device than for the 7-mu m device. The f(max) characteristic of 5-mu m SD spacing device decreases more dramatically above 125 degrees C than the 7-mu m SD spacing device. This phenomenon might be due to stronger phonon scattering for shorter channel device at high temperatures.en_US
dc.language.isoen_USen_US
dc.titleRF Characteristics of AlGaN/GaN HEMTs under Different Temperaturesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage411en_US
dc.citation.epage413en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000316563400098en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper