Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wong, Yuen-Yee | en_US |
dc.contributor.author | Chiu, Yu-Sheng | en_US |
dc.contributor.author | Luong, Tien-Tung | en_US |
dc.contributor.author | Lin, Tai-Ming | en_US |
dc.contributor.author | Ho, Yen-Teng | en_US |
dc.contributor.author | Lin, Yue-Chin | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-04-02T06:04:19Z | - |
dc.date.available | 2019-04-02T06:04:19Z | - |
dc.date.issued | 2012-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150574 | - |
dc.description.abstract | AlGaN/GaN high electron mobility transistor (HEMT) was grown on silicon carbide substrate by metalorganic chemical vapor deposition technique. The AlGaN/GaN structure was optimized by tuning the growth conditions such as AlN buffer thickness, and the Al composition and thickness of AlGaN barrier layer. As a result, the X-ray rocking curve widths were 277 arcsec and 324 arcsec for the GaN (002) and (102) planes, respectively, indicating a high crystalline quality. Hall measurement showed that the AlGaN/GaN structure has a high electron mobility of 1840 (cm(2)/V-s) and a sheet electron concentration of 9.85 x10(12) cm-(2). Besides, HEMT device with sub-micron gate-length (0.7 mu m) was also successfully fabricated. DC measurement showed that the HEMT device has a saturated current of 800 mA/mm, a transconductance of 257 mS/mm and an off-state breakdown voltage larger than 100 V. For RF performance, the device has achieved an output power density (P-out), gain, and power added efficiency (PAE) of 7 W/mm, 23.5 dB and 61.7%, respectively, measured at 2 GHz frequency. On the other hand, the RF performance measured at 8 GHz showed that the device could achieve P-out, gain and PAE of 5.01 W/mm, 14.9 dB and 26.23% respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth and Fabrication of AlGaN/GaN HEMT on SiC Substrate | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | en_US |
dc.citation.spage | 729 | en_US |
dc.citation.epage | 732 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000316563400170 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Conferences Paper |