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dc.contributor.authorWu, CYen_US
dc.contributor.authorLi, YKen_US
dc.contributor.authorTu, CCen_US
dc.date.accessioned2019-04-02T06:04:42Z-
dc.date.available2019-04-02T06:04:42Z-
dc.date.issued2003-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150591-
dc.description.abstractCdSe nanoparticles (NPs) have shown superior photoconductivity as the particle size is shrunk to nano-scale. This provides a potential application as a nano-photo-sensor. In this work, we choose the CdSe NPs with diameter of 25nm, which is comparable to the electron mean free path in bulk material, to get a high mobility in NPs. By using the DNA oligonucleotides as linkers through Au-S bonds, a new photo-sensing nano-device structure is proposed with Au NPs of 60 nm in diameter and CdSe NPs on a silicon substrate, where the CMOS interface circuits are designed to read signals of the sensor.en_US
dc.language.isoen_USen_US
dc.subjectCdSe and Au nanoparticlesen_US
dc.subjectphotoconductivityen_US
dc.subjectDNA self-assemblyen_US
dc.subjectsensing and amplifying circuiten_US
dc.titleA new photo-sensing nano-device structure with CdSe and Au nanoparticles on silicon substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGSen_US
dc.citation.spage763en_US
dc.citation.epage765en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000185389900199en_US
dc.citation.woscount0en_US
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