完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Li, YK | en_US |
dc.contributor.author | Tu, CC | en_US |
dc.date.accessioned | 2019-04-02T06:04:42Z | - |
dc.date.available | 2019-04-02T06:04:42Z | - |
dc.date.issued | 2003-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150591 | - |
dc.description.abstract | CdSe nanoparticles (NPs) have shown superior photoconductivity as the particle size is shrunk to nano-scale. This provides a potential application as a nano-photo-sensor. In this work, we choose the CdSe NPs with diameter of 25nm, which is comparable to the electron mean free path in bulk material, to get a high mobility in NPs. By using the DNA oligonucleotides as linkers through Au-S bonds, a new photo-sensing nano-device structure is proposed with Au NPs of 60 nm in diameter and CdSe NPs on a silicon substrate, where the CMOS interface circuits are designed to read signals of the sensor. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | CdSe and Au nanoparticles | en_US |
dc.subject | photoconductivity | en_US |
dc.subject | DNA self-assembly | en_US |
dc.subject | sensing and amplifying circuit | en_US |
dc.title | A new photo-sensing nano-device structure with CdSe and Au nanoparticles on silicon substrate | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | en_US |
dc.citation.spage | 763 | en_US |
dc.citation.epage | 765 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000185389900199 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |