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dc.contributor.authorHsieh, Meng-Chienen_US
dc.contributor.authorWang, Jia-Fengen_US
dc.contributor.authorWang, Yu-Shouen_US
dc.contributor.authorYang, Cheng-Hongen_US
dc.contributor.authorChen, Ross C. C.en_US
dc.contributor.authorChiang, Chen-Haoen_US
dc.contributor.authorChen, Yung-Fuen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.date.accessioned2014-12-08T15:21:13Z-
dc.date.available2014-12-08T15:21:13Z-
dc.date.issued2011-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3663436en_US
dc.identifier.urihttp://hdl.handle.net/11536/15060-
dc.description.abstractThis study elucidates the influence of the N-related localized states on electron emission properties of a GaAsN quantum well (QW) that is grown by molecular beam epitaxy. The N-related localized states in a GaAsN QW are identified as both optical and electrical electron trap states. Furthermore, exactly how N-related localized states influence the electron emission properties of a GaAsN quantum well is examined. The presence of N-related localized states effectively suppresses the tunneling emission of GaAsN QW electron states, leading to a long electron emission time for the GaAsN QW electron states. Thermal annealing can reduce the number of N-related localized states, resulting in a recovery of the tunneling emission for GaAsN QW electron states. Increasing the annealing temperature can restore the electron emission behavior of GaAsN QW to the typical electron tunneling emission for a high-quality QW. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3663436]en_US
dc.language.isoen_USen_US
dc.titleRole of the N-related localized states in the electron emission properties of a GaAsN quantum wellen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3663436en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume110en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000297943700067-
dc.citation.woscount1-
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