完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Chu-Fengen_US
dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorWu, Chin-Ningen_US
dc.contributor.authorHsieh, Cheng-Tingen_US
dc.contributor.authorWang, Yu-Binen_US
dc.contributor.authorLiu, Chung-Hsienen_US
dc.contributor.authorChang, Kuo-Chinen_US
dc.date.accessioned2019-04-02T06:04:17Z-
dc.date.available2019-04-02T06:04:17Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/04514.0055ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/150619-
dc.description.abstractThe Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/alpha-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 angstrom-thick alpha-Si layer and treating the stack with O-2 gas diluted by 13% N-2 for 3 min.en_US
dc.language.isoen_USen_US
dc.titleOXIDATION STUDY OF GE CONDENSATION ON SGOI NANOWIRE BIOSENSOR FABRICATIONen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/04514.0055ecsten_US
dc.identifier.journalSENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 221ST ECS MEETINGen_US
dc.citation.volume45en_US
dc.citation.spage55en_US
dc.citation.epage66en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325215100006en_US
dc.citation.woscount0en_US
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