Title: GaN HEMTs Power Module Package Design and Performance Evaluation
Authors: Ho, Chung-Hsiang
Chou, Po-Chien
Cheng, Stone
機械工程學系
Department of Mechanical Engineering
Issue Date: 1-Jan-2013
Abstract: This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. We found some conditions that makes the parallel connection difference down to zero. According that, The GaN has maxima drain current=5.98A(98.8%).
URI: http://hdl.handle.net/11536/150627
ISSN: 1063-6854
Journal: 2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
Begin Page: 297
End Page: 299
Appears in Collections:Conferences Paper