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dc.contributor.authorChen, Chien-Changen_US
dc.contributor.authorWu, Wei-Chenen_US
dc.contributor.authorChin, Ching-Yuen_US
dc.contributor.authorChen, Hung-Mingen_US
dc.contributor.authorLin, Vitoen_US
dc.contributor.authorChen, Easonen_US
dc.date.accessioned2019-04-02T06:04:21Z-
dc.date.available2019-04-02T06:04:21Z-
dc.date.issued2013-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150632-
dc.description.abstractBy employing the physical characteristics of creep deformation mechanisms for solder joints in a flip-chip ball grid array (FCBGA) package under a thermal cyclic condition, an analytical model for the prediction of mean-time-to-crack (MTTC) is presented in the paper. With the consideration of time-dependent thermal testing functionals, the basic co-analyses of one-cycle Nabarro-Herring and Coble creep rates and the corresponding damage accumulation functionals for the conventional eutectic Sn/Pb micro-solder material are studied using the proposed MTTC model theoretically. For experimentally validation of the MTTC model, a batch of devices filled with resin in FCGBA package had been tested under a -40 degrees C similar to 125 degrees C thermal cyclic test with a period of 1-hour 1000 times. The MTTC model reveals that the solder bumps within the FCGBA can survive about 0.53 year under the cyclic testing circumstance. Under the room temperature, the device even can survive about 2.45 years under continuously operations.en_US
dc.language.isoen_USen_US
dc.titleMean-time-to-crack Model of Microbump Interconnect in FCGBA Package under Thermal Cyclic Testen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 19TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC)en_US
dc.citation.spage104en_US
dc.citation.epage109en_US
dc.contributor.department丘成桐中心zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentShing-Tung Yau Centeren_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000335321100019en_US
dc.citation.woscount0en_US
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