The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate

Abstract

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 degrees C to 85 degrees C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.