标题: Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters
作者: Kuan, Chin-I
Lin, Horng-Chih
Li, Pei-Wen
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: IGZO;film-profile-engineered;Thin film transistors;inverters;transconductance;voltage gain;long-term stability
公开日期: 1-一月-2018
摘要: IGZO 3-D film-profile-engineered (FPE) inverters were fabricated and characterized. The unipolar load and driver thin-film transistors (TFTs) were stacked vertically not only for the sake of saving footprint, but also for the flexibility of threshold voltage adjustment by the lengths of suspended hardmask. The proposed 3-1) inverters demonstrate full-swing switching with a voltage gain as high as 13.6 V/V at an operating voltage of 5 V. The long-term stability was investigated in terms of the voltage gain, transconductance (gm) and threshold voltage (Vth) shift. Following 4 months, degradation in the voltage gain of the inverter in company of reduced gm and positive Vth shift for the drive TFT is attributed to the outgassing of hydrogen.
URI: http://hdl.handle.net/11536/150741
ISSN: 1946-1550
期刊: 2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
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