标题: | Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters |
作者: | Kuan, Chin-I Lin, Horng-Chih Li, Pei-Wen 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | IGZO;film-profile-engineered;Thin film transistors;inverters;transconductance;voltage gain;long-term stability |
公开日期: | 1-一月-2018 |
摘要: | IGZO 3-D film-profile-engineered (FPE) inverters were fabricated and characterized. The unipolar load and driver thin-film transistors (TFTs) were stacked vertically not only for the sake of saving footprint, but also for the flexibility of threshold voltage adjustment by the lengths of suspended hardmask. The proposed 3-1) inverters demonstrate full-swing switching with a voltage gain as high as 13.6 V/V at an operating voltage of 5 V. The long-term stability was investigated in terms of the voltage gain, transconductance (gm) and threshold voltage (Vth) shift. Following 4 months, degradation in the voltage gain of the inverter in company of reduced gm and positive Vth shift for the drive TFT is attributed to the outgassing of hydrogen. |
URI: | http://hdl.handle.net/11536/150741 |
ISSN: | 1946-1550 |
期刊: | 2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) |
显示于类别: | Conferences Paper |